Datasheet Details
| Part number | BD277 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.72 KB |
| Description | PNP Transistor |
| Download | BD277 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor.
| Part number | BD277 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.72 KB |
| Description | PNP Transistor |
| Download | BD277 Download (PDF) |
|
|
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·Wide Area of Safe Operation ·Low Saturation Voltage·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in series regulators and shunt regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -4 IC Collector Current-Continuous -7 IB Base Current -3 PC Collector Power Dissipation @ TC=25℃ 70 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.78 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W BD277 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.75A;
IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1.75A ;
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