BD286 transistor equivalent, pnp transistor.
*Designed for medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -45V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.6V(Max)@ IC = -2A
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable op.
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