Datasheet Details
| Part number | BD286 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.52 KB |
| Description | PNP Transistor |
| Download | BD286 Download (PDF) |
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| Part number | BD286 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.52 KB |
| Description | PNP Transistor |
| Download | BD286 Download (PDF) |
|
|
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·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC = -2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1 A 36 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD286 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD286.
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BD28620MUV | 20W+20W Class D Speaker Amplifier | ROHM |
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