Datasheet Details
| Part number | BD301 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.73 KB |
| Description | NPN Transistor |
| Download | BD301 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD301.
| Part number | BD301 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.73 KB |
| Description | NPN Transistor |
| Download | BD301 Download (PDF) |
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·DC Current Gain - : hFE =30(Min.)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Complement to Type BD302 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 55 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.3 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ShunYe | BD301N | 30 AMP BLOCK DIODES | ShunYe |
| ShunYe | BD301P | 30 AMP BLOCK DIODES | ShunYe |
| Part Number | Description |
|---|---|
| BD303 | NPN Transistor |
| BD304 | PNP Transistor |
| BD311 | NPN Transistor |
| BD312 | PNP Transistor |
| BD313 | NPN Transistor |
| BD314 | Silicon PNP Power Transistor |
| BD315 | NPN Transistor |
| BD316 | PNP Transistor |
| BD317 | NPN Transistor |
| BD318 | PNP Transistor |