Datasheet Details
| Part number | BD313 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.66 KB |
| Description | NPN Transistor |
| Download | BD313 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD313.
| Part number | BD313 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.66 KB |
| Description | NPN Transistor |
| Download | BD313 Download (PDF) |
|
|
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·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Complement to Type BD314 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Part Number | Description |
|---|---|
| BD311 | NPN Transistor |
| BD312 | PNP Transistor |
| BD314 | Silicon PNP Power Transistor |
| BD315 | NPN Transistor |
| BD316 | PNP Transistor |
| BD317 | NPN Transistor |
| BD318 | PNP Transistor |
| BD301 | NPN Transistor |
| BD303 | NPN Transistor |
| BD304 | PNP Transistor |