Datasheet Details
| Part number | BD318 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.70 KB |
| Description | PNP Transistor |
| Download | BD318 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor.
| Part number | BD318 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.70 KB |
| Description | PNP Transistor |
| Download | BD318 Download (PDF) |
|
|
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·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -8A ·Complement to Type BD317 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts into 8 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W BD318 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-30mA;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD318 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| BD311 | NPN Transistor |
| BD312 | PNP Transistor |
| BD313 | NPN Transistor |
| BD314 | Silicon PNP Power Transistor |
| BD315 | NPN Transistor |
| BD316 | PNP Transistor |
| BD317 | NPN Transistor |
| BD301 | NPN Transistor |
| BD303 | NPN Transistor |
| BD304 | PNP Transistor |