Datasheet Details
| Part number | BD329 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.46 KB |
| Description | NPN Transistor |
| Download | BD329 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD329.
| Part number | BD329 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.46 KB |
| Description | NPN Transistor |
| Download | BD329 Download (PDF) |
|
|
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·DC Current Gain- : hFE= 85~375(Min)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 20V(Min) ·Complement to type BD330 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially for battery equipped applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD329 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD329 | NPN power transistor | NXP |
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|---|---|
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