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BD333 - NPN Transistor

General Description

High DC Current Gain Complement to type BD334 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

circuit for audio output stages and general amplifier and switching applications.

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Part Number Description Manufacturer
BD333 Complementary Power Darlingtons ST Microelectronics
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BD330 Silicon PNP Power Transistor Inchange Semiconductor
BD331 Complementary Power Darlingtons ST Microelectronics

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD333 DESCRIPTION ·High DC Current Gain ·Complement to type BD334 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 80 V 80 V 6 V 6 A 0.