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BD333 - NPN Transistor

Description

High DC Current Gain Complement to type BD334 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

circuit for audio output stages and general amplifier and switching applications.

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Datasheet Details

Part number BD333
Manufacturer INCHANGE
File Size 205.86 KB
Description NPN Transistor
Datasheet download datasheet BD333 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD333 DESCRIPTION ·High DC Current Gain ·Complement to type BD334 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 80 V 80 V 6 V 6 A 0.
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