Datasheet Details
| Part number | BD343 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.16 KB |
| Description | PNP Transistor |
| Download | BD343 Download (PDF) |
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| Part number | BD343 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.16 KB |
| Description | PNP Transistor |
| Download | BD343 Download (PDF) |
|
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·Excellent Safe Operating Area ·High DC Current Gain- : hFE=15-100(Min)@IC= -8A ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC = -8.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -15 A IB Base Current-Continuous -5 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor BD343 CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
IB= 0 -40 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A;
IB= -0.8A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A;
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD343.
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