Datasheet Details
| Part number | BD347 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.89 KB |
| Description | NPN Transistor |
| Datasheet |
 BD347 Datasheet
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| Part number | BD347 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.89 KB |
| Description | NPN Transistor |
| Datasheet |
BD347 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for RF power and general-purpose audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak tp≤10ms 12 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3 A 60 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BD347 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 MIN MAX UNIT 60 V 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.3A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD347.
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| Part Number | Description |
|---|---|
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