BD347 Datasheet - INCHANGE

NPN Transistor

BD347 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 3A *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS *Designed for RF power and ge.

BD347 Datasheet (180.89 KB)

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BD347

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INCHANGE

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180.89 KB

Description:

Npn transistor.

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BD347 NPN Transistor INCHANGE

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BD347 General Description

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