Datasheet Details
| Part number | BD350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.74 KB |
| Description | PNP Transistor |
| Datasheet |
 BD350 Datasheet
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| Part number | BD350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.74 KB |
| Description | PNP Transistor |
| Datasheet |
BD350 Datasheet
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·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -30 A ICM Collector Current-Peak -50 A IB Base Current-Continuous -7.5 A Collector Power Dissipation@Ta=25℃ 5 PC W Collector Power Dissipation@TC=25℃ 160 TJ Junction Temperature Tstg Storage Temperature 175 ℃ -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor BD350 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A;
isc Silicon PNP Power Transistors INCHANGE Semiconductor BD350.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD3500 | 35A BOSCH TYPE PRESS-FIT DIODE | Won-Top Electronics |
 |
BD3500FVM | Nch FET Ultra LDO Controllers | Rohm |
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BD3501 | 35A BOSCH TYPE PRESS-FIT DIODE | Won-Top Electronics |
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BD3501FVM | Nch FET Ultra LDO Controllers | Rohm |
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BD3502 | 35A BOSCH TYPE PRESS-FIT DIODE | Won-Top Electronics |
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