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BD354 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

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General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2A ·Excellent Safe Operating Area ·Complement to Type BD355 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 4 A 1 A 25 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BD354 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A;

IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A;

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD354.

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