Datasheet4U Logo Datasheet4U.com

BD355 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC = -2.0A ·Excellent Safe Operating Area ·Complement to Type BD354 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -4 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD355 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;

IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A;

IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A;

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD355.