Datasheet Details
| Part number | BD364 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.41 KB |
| Description | PNP Transistor |
| Datasheet |
 BD364 Datasheet
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| Part number | BD364 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.41 KB |
| Description | PNP Transistor |
| Datasheet |
BD364 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Excellent Safe Operating Area ·Complement to Type BD365 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A IB Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor BD364 CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;IB=0 50 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A;
IB=1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=20A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD364.
| Part Number | Description |
|---|---|
| BD365 | PNP Transistor |
| BD366 | PNP Transistor |
| BD367 | PNP Transistor |
| BD368 | PNP Transistor |
| BD301 | NPN Transistor |
| BD303 | NPN Transistor |
| BD304 | PNP Transistor |
| BD311 | NPN Transistor |
| BD312 | PNP Transistor |
| BD313 | NPN Transistor |