Datasheet Details
| Part number | BD365 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.00 KB |
| Description | PNP Transistor |
| Download | BD365 Download (PDF) |
|
|
| Part number | BD365 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.00 KB |
| Description | PNP Transistor |
| Download | BD365 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Excellent Safe Operating Area ·Complement to Type BD364 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A IB Base Current-Continuous -5.0 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor BD365 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A;
isc Silicon PNP Power Transistors INCHANGE Semiconductor BD365.
| Part Number | Description |
|---|---|
| BD364 | PNP Transistor |
| BD366 | PNP Transistor |
| BD367 | PNP Transistor |
| BD368 | PNP Transistor |
| BD301 | NPN Transistor |
| BD303 | NPN Transistor |
| BD304 | PNP Transistor |
| BD311 | NPN Transistor |
| BD312 | PNP Transistor |
| BD313 | NPN Transistor |