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BD500B Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Download the BD500B datasheet PDF. This datasheet also includes the BD500 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD500-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) -80V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD500 -55 VCBO Collector-Base Voltage V BD500B -85 BD500 -50 VCEO Collector-Emitter Voltage V BD500B -80 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -10 A 75 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.39 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD500/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD500 BD500B IC= -30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD500 IC= -5A;

IB= -0.5A BD500B IC= -3.5A;

Overview

isc Silicon PNP Power Transistors BD500/B.