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BD536 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type BD535 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCES Collector-Emitter Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current -1 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= -30mA;

IB= 0 VCE(sat)-1 Collector-Emitter Voltage Saturation IC= -2A;

Overview

isc Silicon PNP Power Transistor BD536.