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BD537 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

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General Description

·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type BD538 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCES Collector-Emitter Voltage 80 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 IE Emitter Current- Continuous 8 IB Base Current 1 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A;

Overview

isc Silicon NPN Power Transistor BD537.

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