BD540C Description
hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·plement to Type BD539C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...