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BD543B Datasheet Preview

BD543B Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
BD543/A/B/C
DESCRIPTION
·70 W at 25°C Case Temperature
·Complement to Type BD544/A/B/C
·8 A Continuous Collector Current
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
·Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BD543
40
BD543A
60
VCBO
Collector-Base Voltage
V
BD543B
80
BD543C
100
BD543
40
BD543A
60
VCEO
Collector-Emitter Voltage
V
BD543B
80
BD543C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
10
A
70
W
2
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.79 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BD543B Datasheet Preview

BD543B Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD543
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD543A
BD543B
IC= 30mA ; IB= 0
BD543C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 4V
BD543
VCE= 40V; VBE= 0
ICES
Collector
Cutoff Current
BD543A
BD543B
VCE= 60V; VBE= 0
VCE= 80V; VBE= 0
BD543C
VCE= 100V; VBE= 0
ICEO
Collector
Cutoff Current
BD543/A
VCE= 30V; IB= 0
BD543B/C VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
hFE-3
DC Current Gain
IC= 5A; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 6A; IB1= -IB2= 0.6A;
VBE(off)= -4V, RL= 5Ω
BD543/A/B/C
MIN TYP. MAX UNIT
40
60
V
80
100
0.5
V
0.5
V
1.0
V
1.4
V
0.4
0.4
mA
0.4
0.4
0.7 mA
0.7
1
mA
60
40
15
0.6
μs
1.0
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BD543B
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

BD543B Datasheet PDF





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