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BD543C Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Download the BD543C datasheet PDF. This datasheet also includes the BD543 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD543-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·70 W at 25°C Case Temperature ·Complement to Type BD544/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD543 40 BD543A 60 VCBO Collector-Base Voltage V BD543B 80 BD543C 100 BD543 40 BD543A 60 VCEO Collector-Emitter Voltage V BD543B 80 BD543C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 10 A 70 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.79 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD543 V(BR)CEO Collector-Emitter Breakdown Voltage BD543A BD543B IC= 30mA ;

IB= 0 BD543C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;

Overview

isc Silicon NPN Power Transistors BD543/A/B/C.