Datasheet4U Logo Datasheet4U.com

BD545A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Download the BD545A datasheet PDF. This datasheet also includes the BD545 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD545-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Collector Current -IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545;

60V(Min)- BD545A 80V(Min)- BD545B;

100V(Min)- BD545C ·Complement to Type BD546/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD545 40 BD545A 60 VCBO Collector-Base Voltage V BD545B 80 BD545C 100 BD545 40 VCEO Collector-Emitter Voltage BD545A 60 V BD545B 80 BD545C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 3.5 W 85 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD545/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

Overview

isc Silicon NPN Power Transistor BD545/A/B/C.