Datasheet Details
| Part number | BD582 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.53 KB |
| Description | PNP Transistor |
| Download | BD582 Download (PDF) |
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| Part number | BD582 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.53 KB |
| Description | PNP Transistor |
| Download | BD582 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Complement to Type BD581 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IB Base Current-Continuous -1 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.125 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor BD582 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain—Bandwidth Product CONDITIONS IC= -30mA;
IB= 0 IC= -3A;
isc Silicon PNP Power Transistors INCHANGE Semiconductor BD582.
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|---|---|
| BD500 | PNP Transistor |
| BD500B | PNP Transistor |
| BD501 | Silicon NPN Power Transistors |
| BD501B | Silicon NPN Power Transistors |
| BD533 | NPN Transistor |
| BD534 | PNP Transistor |
| BD535 | NPN Transistor |
| BD536 | PNP Transistor |
| BD537 | NPN Transistor |
| BD538 | PNP Transistor |