Datasheet Details
| Part number | BD609 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.61 KB |
| Description | NPN Transistor |
| Datasheet |
 BD609 Datasheet
|
|
|
| Part number | BD609 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.61 KB |
| Description | NPN Transistor |
| Datasheet |
BD609 Datasheet
|
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type BD610 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 90 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.39 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD609 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD609.
| Part Number | Description |
|---|---|
| BD633 | Silicon NPN Power Transistor |
| BD636 | Silicon PNP Power Transistor |
| BD643 | NPN Transistor |
| BD643F | NPN Transistor |
| BD645 | NPN Transistor |
| BD645F | NPN Transistor |
| BD646 | PNP Transistor |
| BD646F | PNP Transistor |
| BD647 | NPN Transistor |
| BD647F | NPN Transistor |