isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BD643F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
45
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
2.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
3.0
V
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 3V
2.5
V
ICBO
Collector Cutoff Current
VCB= 45V; IE= 0
VCB= 30V; IE= 0; TC= 150℃
0.1
mA
1.0
ICEO
Collector Cutoff Current
VCE= 25V; IB= 0
0.2
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5
mA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 3V
1900
hFE-2
DC Current Gain
IC= 4A ; VCE= 3V
750
hFE-3
DC Current Gain
IC= 8A ; VCE= 3V
1800
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