BD643F Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD643F TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 45 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;.
