Datasheet Details
| Part number | BD647 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 188.89 KB |
| Description | NPN Transistor |
| Datasheet |
 BD647-INCHANGE.pdf
|
| Part number | BD647 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 188.89 KB |
| Description | NPN Transistor |
| Datasheet |
BD647-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High DC Current Gain : hFE= 750(Min) @IC= 3A Low Saturation Voltage Complement to Type BD648 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO
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