BD651 transistor equivalent, npn transistor.
*Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*High DC Current Gain
: hFE= 750(Min) @IC= 3A
*Low Saturation Voltage
*Complement to Type BD652
*Minimum Lot-to-Lot variations for robust device
performance and reliable .
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