npn transistor.
*Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATIN.
*Collector
–Emitter Breakdown Voltage—
: V(BR)CEO = 80V
*DC Current Gain—
: hFE = 750(Min) @ IC= 2 A
*Complement to Type BD680A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICA.
Image gallery
TAGS
Download (Size : 185.17KB)