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BD683 - NPN Transistor

Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 120V(Min.) DC Current Gain : hFE = 750(Min)@ IC= 1.5A Complement to Type BD684 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as outpu

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD683 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 120V(Min.) ·DC Current Gain— : hFE = 750(Min)@ IC= 1.5A ·Complement to Type BD684 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.
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