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BD683 Datasheet Preview

BD683 Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BD683
DESCRIPTION
·Collector–Emitter Breakdown Voltage
: V(BR)CEO = 120V(Min.)
·DC Current Gain
: hFE = 750(Min)@ IC= 1.5A
·Complement to Type BD684
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
0.1
A
40
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 3.12 /W
isc websitewww.iscsemi.com
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INCHANGE

BD683 Datasheet Preview

BD683 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BD683
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA
VBE(on) Base-Emitter On Voltage
IC= 1.5A; VCE= 3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 120V; IB= 0
VCB= 140V; IE= 0
VCB= 70V; IE= 0;TC= 150
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.5 A ; VCE= 3V
hFE-2
DC Current Gain
IC= 0.5 A ; VCE= 3V
hFE-3
DC Current Gain
IC= 4 A ; VCE= 3V
MIN MAX UNIT
120
V
2.5
V
2.5
V
0.5
mA
0.2
1.0
mA
2.0
mA
750
2200
1500
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BD683
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BD683 Datasheet PDF





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