Datasheet Details
| Part number | BD698 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.92 KB |
| Description | PNP Transistor |
| Datasheet |
 BD698 Datasheet
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| Part number | BD698 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.92 KB |
| Description | PNP Transistor |
| Datasheet |
BD698 Datasheet
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·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -60V(Min.) ·DC Current Gain— : hFE = 750(Min) @ IC= -3A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -5 ICM Collector Current-Peak -8 IB Base Current-DC PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -120 70 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD698 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -12mA VCE(sat)-2 Collector-Emitter Saturation voltage IC= -5A ,IB= -20mA VBE(on) Base-Emitter On Voltage IC= -3.0A ;
VCE= -3V ICBO Collector Cutoff Current VCB= -60V, IE= 0 ICEO Collector Cutoff Current VCE= -60V, IB= 0 IEBO Emitter Cutoff Current VEB= -5V;
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor.
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