Datasheet Details
| Part number | BD706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.45 KB |
| Description | PNP Transistor |
| Datasheet |
 BD706 Datasheet
|
|
|
| Part number | BD706 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.45 KB |
| Description | PNP Transistor |
| Datasheet |
BD706 Datasheet
|
|
|
|
·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min.) ·Complement to Type BD705 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCES Collector-Emitter Voltage VBE= 0 -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD706 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
isc Silicon PNP Power Transistor BD706.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD706 | PNP Transistor | ST Microelectronics |
| Part Number | Description |
|---|---|
| BD702 | PNP Transistor |
| BD705 | NPN Transistor |
| BD707 | NPN Transistor |
| BD708 | PNP Transistor |
| BD709 | NPN Transistor |
| BD710 | PNP Transistor |
| BD711 | NPN Transistor |
| BD712 | PNP Transistor |
| BD719 | NPN Transistor |
| BD720 | PNP Transistor |