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BD710 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

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General Description

·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min.) ·Complement to Type BD709 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCES Collector-Emitter Voltage VBE= 0 -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD710 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;

Overview

isc Silicon PNP Power Transistor BD710.

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