Datasheet4U Logo Datasheet4U.com

BD711 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

📥 Download Datasheet

General Description

·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min.)= ·Complement to Type BD712 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCES Collector-Emitter Voltage VBE= 0 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD711 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;

Overview

isc Silicon NPN Power Transistor BD711.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
STMicroelectronics Logo BD711 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics
SavantIC Logo BD711 SILICON POWER TRANSISTOR SavantIC

More Datasheets from Inchange Semiconductor

Part Number Description
BD710 PNP Transistor
BD712 PNP Transistor
BD719 NPN Transistor
BD702 PNP Transistor
BD705 NPN Transistor
BD706 PNP Transistor
BD707 NPN Transistor
BD708 PNP Transistor
BD709 NPN Transistor
BD720 PNP Transistor