Datasheet Details
| Part number | BD719 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.77 KB |
| Description | NPN Transistor |
| Datasheet |
 BD719 Datasheet
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| Part number | BD719 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.77 KB |
| Description | NPN Transistor |
| Datasheet |
BD719 Datasheet
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·DC Current Gain- : hFE= 20(Min)@ IC= 2A ·Complement to Type BD720/722/724/726 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD719 60 BD721 80 VCBO Collector-Base Voltage BD723 100 BD725 120 BD719 60 VCEO Collector-Emitter Voltage BD721 80 BD723 100 BD725 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 4 ICM Collector Current-Peak 7 IB Base Current-Continuous 1 PC Collector Power Dissipation @ TC=25℃ 36 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD719/721/723/725 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD719 VCEO(SUS) Collector-Emitter Sustaining Voltage BD721 BD723 IC= 30mA ;
IB= 0 BD725 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.2A VBE(on) ICBO ICEO Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= 2A;
isc Silicon NPN Power Transistor BD719/721/723/725.
| Part Number | Description |
|---|---|
| BD710 | PNP Transistor |
| BD711 | NPN Transistor |
| BD712 | PNP Transistor |
| BD702 | PNP Transistor |
| BD705 | NPN Transistor |
| BD706 | PNP Transistor |
| BD707 | NPN Transistor |
| BD708 | PNP Transistor |
| BD709 | NPN Transistor |
| BD720 | PNP Transistor |