Datasheet Details
| Part number | BD722 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 186.73 KB |
| Description | PNP Transistor |
| Datasheet |
 BD722 Datasheet
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| Part number | BD722 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.73 KB |
| Description | PNP Transistor |
| Datasheet |
BD722 Datasheet
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·DC Current Gain- : hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -80V(Min) ·Complement to type BD721 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 ICM Collector Current-Peak -7 IB Base Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 36 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD722 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
isc Silicon PNP Power Transistor BD722.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD722 | (BD720 - BD726) Silicon Power Transistors | NXP |
| Part Number | Description |
|---|---|
| BD720 | PNP Transistor |
| BD723 | NPN Transistor |
| BD723 | NPN Transistor |
| BD724 | PNP Transistor |
| BD725 | NPN Transistor |
| BD726 | PNP Transistor |
| BD702 | PNP Transistor |
| BD705 | NPN Transistor |
| BD706 | PNP Transistor |
| BD707 | NPN Transistor |