BD751B
BD751B is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C
- High Power Dissipation
- plement to Type BD750B/750C
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high voltage and high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter Voltage
BD751C 140
BD751B 100
VCEO(SUS) Collector-Emitter Voltage
BD751C 130
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@TC=25℃ 250
Junction Temperature
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS...
