Datasheet Details
| Part number | BD788 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.44 KB |
| Description | PNP Transistor |
| Download | BD788 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor BD788.
| Part number | BD788 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.44 KB |
| Description | PNP Transistor |
| Download | BD788 Download (PDF) |
|
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·DC Current Gain- : hFE= 40~250(Min)@ IC= -0.2A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min) ·Complement to type BD787 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.34 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD788 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= -10mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD788 | Complementary Plastic Silicon Power Transistors | Motorola Inc |
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BD788 | Complementary Silicon Power Transistor | ON Semiconductor |
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BD788G | Silicon Power Transistors | ON Semiconductor |
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