Inchange Semiconductor BD799
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD799 |
|---|---|
| Datasheet | BD799 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min)●Low Saturation Voltage
●Complement to Type BD800
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 3 A 65 W 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.92 ℃/W BD799 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD799ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.