Datasheet Details
| Part number | BD807 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.30 KB |
| Description | NPN Transistor |
| Download | BD807 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD807.
| Part number | BD807 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.30 KB |
| Description | NPN Transistor |
| Download | BD807 Download (PDF) |
|
|
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·DC Current Gain - : hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD808 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 90 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.39 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
| Part Number | Description |
|---|---|
| BD800 | PNP Transistor |
| BD801 | NPN Transistor |
| BD802 | PNP Transistor |
| BD808 | PNP Transistor |
| BD809 | NPN Transistor |
| BD810 | PNP Transistor |
| BD825 | NPN Transistor |
| BD826 | PNP Transistor |
| BD827 | NPN Transistor |
| BD828 | PNP Transistor |