| Part number | BD839 |
|---|---|
| Datasheet | BD839-INCHANGE.pdf |
| File Size | 207.69 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD839 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD839 | Silicon Planar Epitaxial Power Transistor | NXP |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD830 | PNP Transistor |
| BD800 | PNP Transistor |
| BD801 | NPN Transistor |
| BD802 | PNP Transistor |
| BD807 | NPN Transistor |
| BD808 | PNP Transistor |
| BD809 | NPN Transistor |
| BD810 | PNP Transistor |
| BD825 | NPN Transistor |
| BD826 | PNP Transistor |
