BD896 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.
- Part: BD896
- Manufacturer: Inchange Semiconductor (official site)
- Size: 208.79 KB
BD896 is PNP Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.