BD897A Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-.
- Part: BD897A
- Manufacturer: Inchange Semiconductor (official site)
- Size: 208.05 KB
BD897A is NPN Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-.