Datasheet4U Logo Datasheet4U.com

BD899 Datasheet - INCHANGE

NPN Transistor

BD899 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *High DC Current Gain : hFE= 750(Min) @IC= 3A *Collector Power Dissipation- : PC= 70W@ TC= 25℃ *8 A Continuous Collector Current *Complement to Type BD900 *Minimum Lot-to-Lot variations for robust device performance a.

BD899 Datasheet (207.89 KB)

Preview of BD899 PDF

Datasheet Details

Part number:

BD899

Manufacturer:

INCHANGE

File Size:

207.89 KB

Description:

Npn transistor.

📁 Related Datasheet

BD890CS DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)

BD890CT THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)

BD890S DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)

BD890T THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)

BD890YS DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)

BD890YT THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)

BD8918F IC Care Interface (Rohm)

BD8918FV IC Care Interface (Rohm)

BD8919F IC Care Interface (Rohm)

BD8919FV IC Care Interface (Rohm)

TAGS

BD899 NPN Transistor INCHANGE

Image Gallery

BD899 Datasheet Preview Page 2

BD899 Distributor