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BD905 - Silicon NPN Power Transistor

General Description

DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min) Complement to Type BD906 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplif

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Full PDF Text Transcription for BD905 (Reference)

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min) ·Complement to Typ...

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r-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min) ·Complement to Type BD906 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.