DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -45V(Min)
Complement to Type BD905
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general purpose power ampl
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BD906. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) ·Complement to T...
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or-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) ·Complement to Type BD905 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
BD906 Datasheet
