Datasheet Details
| Part number | BD911 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.66 KB |
| Description | NPN Transistor |
| Download | BD911 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BD911 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.66 KB |
| Description | NPN Transistor |
| Download | BD911 Download (PDF) |
|
|
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·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type BD912 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current 5 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.38 ℃/W BD911 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD911 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
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BD911 | Power Transistors | RECTRON |
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BD911 | NPN PLASTIC POWER TRANSISTOR | CDIL |
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BD911 | Silicon NPN Power Transistors | Comset Semiconductors |
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BD911 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-THOMSON |
| Part Number | Description |
|---|---|
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