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BD934F - Silicon PNP Power Transistor

Description

DC Current Gain- : hFE= 40(Min)@ IC= -150mA Complement to Type BD933F/935F/937F/939F/941F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak

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isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -150mA ·Complement to Type BD933F/935F/937F/939F/941F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD934F -45 BD936F -60 VCBO Collector-Base Voltage BD938F -100 BD940F -120 BD942F -140 BD934F -45 BD936F -60 VCEO Collector-Emitter Voltage BD938F -80 BD940F -100 BD942F -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -3 ICM Collector Current-Peak -7 IB Base Current-Continuous -0.
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