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BD951 - NPN Transistor

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Part number BD951
Manufacturer INCHANGE
File Size 206.58 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) DC Current Gain- : hFE= 40(Min)@ IC= 500mA Complement to Type BD952 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Curre

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