Datasheet Details
| Part number | BD953 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.70 KB |
| Description | NPN Transistor |
| Download | BD953 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD953.
| Part number | BD953 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.70 KB |
| Description | NPN Transistor |
| Download | BD953 Download (PDF) |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD954 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD953 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD953 | NPN PLASTIC POWER TRANSISTOR | CDIL |
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BD953 | SILICON POWER TRANSISTOR | SavantIC |
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BD9532EKN | Step down DC/DC converter Controller | Rohm |
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BD9533EKN | Step down DC/DC converter Controller | Rohm |
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BD9535MUV | Switching Regulator | Rohm |
| Part Number | Description |
|---|---|
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