Datasheet Details
| Part number | BD955 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.49 KB |
| Description | NPN Transistor |
| Download | BD955 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BD955.
| Part number | BD955 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.49 KB |
| Description | NPN Transistor |
| Download | BD955 Download (PDF) |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD956 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD955 | NPN PLASTIC POWER TRANSISTOR | CDIL |
 |
BD95500MUV | Switching Regulator | Rohm |
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BD95503MUV | 1ch DC/DC converter | Rohm |
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BD95513MUV | Synchronous Buck Converter Integrated FET | ROHM |
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BD95514MUV | Synchronous Boost DC/DC Converter | ROHM |
| Part Number | Description |
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