Datasheet Details
| Part number | BDT32AF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.42 KB |
| Description | PNP Transistor |
| Download | BDT32AF Download (PDF) |
|
|
Overview: isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF.
Download the BDT32AF datasheet PDF. This datasheet also includes the BDT32F variant, as both parts are published together in a single manufacturer document.
| Part number | BDT32AF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.42 KB |
| Description | PNP Transistor |
| Download | BDT32AF Download (PDF) |
|
|
|
·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32F;
-60V(Min)- BDT32AF -80V(Min)- BDT32BF;
-100V(Min)- BDT32CF -120V(Min)- BDT32DF ·Complement to Type BDT31F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT32F -80 VCBO Collector-Base Voltage BDT32AF -100 BDT32BF -120 V BDT32CF -140 BDT32DF -160 BDT32F -40 VCEO Collector-Emitter Voltage BDT32AF -60 BDT32BF -80 V BDT32CF -100 BDT32DF -120 VEBO IC ICM IB PC Tj Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature -5 V -3 A -7 A -1 A 22 W 150 ℃ Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 8.12 ℃/W Thermal Resistance,Junction to Ambient 55 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT32F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT32AF BDT32BF BDT32CF VCE(sat) VBE(on) Collector-Emitter Saturation Voltage BDT32DF BDT32F/AF/BF/C F BDT32DF Base-Emitter On Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current BDT32F/AF BDT32BF/CF BDT32DF IEBO Emitter Cutoff Current hFE-1 hFE-2 DC Current Gain DC Current Gain BDT32F/AF/BF/C F BDT32DF fT Current-Gain—Bandwidth Product Switching Times ton Turn-On Time toff Turn-Off Time CONDITIONS IC= -30mA;
| Part Number | Description |
|---|---|
| BDT32A | PNP Transistor |
| BDT32 | PNP Transistor |
| BDT32B | PNP Transistor |
| BDT32BF | PNP Transistor |
| BDT32C | PNP Transistor |
| BDT32CF | PNP Transistor |
| BDT32DF | PNP Transistor |
| BDT32F | PNP Transistor |
| BDT30 | PNP Transistor |
| BDT30A | PNP Transistor |